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data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 1 general description the ah922 is a unipolar ha ll-effect one-chip switch with digital output, solution for sense magnetic field. it is designed in mixed signal cmos and chopper technology. this ic is quite suitable for use in automotive, industrial a nd consumer applications. the two sensors are suited for operation over extended temperature ranges. the ah922 hall-effect switch is combined with a voltage regulator, hall-voltage generator, chopper small-signal amplifier, schmitt trigger and open-drain output. the ah922 is available in to-92s-3 and sot-23-3 packages. features ? wide operating voltage range ? chopper stabilization ? extremely low switch point drift ? superior temperature stability ? high sensitivity integrated hall sensor ? solid state reliability ? robust emc capability applications ? 5v/12v dc brushless motor/fan ? solid state switch ? speed detection ? revolution counting figure 1. package types of ah922 to-92s-3 sot-23-3
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 2 pin configuration z3 package n package (to-92s-3) (sot-23-3) 1 2 3 3 2 1 (front view) (top view) figure 2. pin configuration of ah922 pin description pin number to-92s-3 sot-23-3 pin name function 1 1 vcc supply voltage 2 3 gnd ground pin 3 2 out output pin
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ah922
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 4 ordering information ah922 - circuit type package temperature range part number marking id packing type to-92s-3 ah922z3-g1 922 bulk sot-23-3 -40 to 125c AH922NTR-G1 gt4 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. g1: green tr: tape & reel blank: bulk package z3: to-92s-3 n: sot-23-3
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 5 absolute maximum ratings (note 1) parameter symbol value unit supply voltage v cc 24 v output current (continuous) i out 25 ma to-92s-3 400 power dissipation p d sot-23-3 230 mw operation temperature t a -50 to 150 oc storage temperature t stg -65 to 150 oc maximum junction temperature t j (max) 165 oc esd (human body model) esd 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v cc 3.5 22 v operating ambient temperature t a -40 125 oc
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 6 electrical characteristics v cc =12v, t a =25c, unless otherwise specified. parameter symbol conditions min typ max unit supply voltage v cc operating 3.5 12 22 v v cc =12v, bb op 3 5 ma saturation voltage v sat i out =20ma, b>b op 185 500 mv output leakage current i leakage v out =20v, b data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 7 magnetic characteristics (continued) figure 4. magnetic flux density of ah922
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 8 test circuit and test conditions figure 5. test circuit of ah922 figure 6. test condition of ah922 (supply current) note 2: the output is open during measurement. note 3: the device is put under the magnetic field: b data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 9 test circuit and test conditions (continued) figure 7. test condition of ah 922 (output saturation voltage) note 4: the output saturation voltage v sat is measured at v cc =12v. note 5: the device is put under the magnetic field: b>b op. figure 8. test condition of ah922 (output leakage current) note 6: the device is put under the magnetic field: b data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 10 -25 0 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i cc (ma) t a ( o c) v cc =3.5v v cc =5v v cc =12v v cc =24v typical performance characteristics figure 9. i cc vs. v cc figure 10. i cc vs. t a figure 11. v sat vs. i out figure 12. v sat vs. t a 2 4 6 8 1012141618202224262830 1.5 2.0 2.5 3.0 3.5 4.0 i cc (ma) v cc (v) 0 5 10 15 20 25 0 20 40 60 80 100 120 140 160 v sat (mv) i out (ma) -25 0 25 50 75 100 125 80 100 120 140 160 180 200 220 v sat (mv) t a ( o c) v cc =3.5v v cc =5v v cc =12v v cc =24v i out =20ma
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 11 -50 -25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 90 100 110 120 130 140 150 b op b rp b hys b op /b rp /b hys (gauss) t a ( o c) typical performance characteristics (continued) figure 13. b op / b rp / b hys vs. v cc figure 14. b op / b rp / b hys vs. t a figure 15. p d vs. t a 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 p d (mw) t a ( o c) sot-23-3 to-92s-3 2 4 6 8 10 12 14 16 18 20 22 24 26 30 40 50 60 70 80 90 100 110 120 130 140 150 b op /b rp /b hys (gauss) v cc (v) b op b rp b hys
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 12 typical application output r l c l 0.1 f v cc figure 16. typical application circuit of ah922
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 13 mechanical dimensions to-92s-3 unit: mm(inch)
data sheet unipolar hall-effect switch ah922 may 2012 rev. 1. 1 bcd semiconductor manufacturing limited 14 mechanical dimensions (continued) sot-23-3 unit: mm(inch) 2. 820(0. 111) 3. 020(0. 119) 2.650(0.104) 2.950(0.116) 0. 950(0. 037) typ 0. 300 ( 0. 012 ) 0. 500 ( 0. 020) 1.500(0.059) 1.700(0.067) 1. 800 ( 0. 071) 2. 000(0. 079) 0.300(0.012) 0.600(0.024) 0. 100(0. 004) 0. 200(0. 008) 0. 000(0. 000) 0. 150(0. 006) 0. 900(0. 035) 1. 300(0. 051) 1.450(0.057) max. 0. 200(0. 008) 0 8 0. 770(0. 030) 1. 070(0. 042) 1. 300(0. 051) 1. 600(0. 063) package sensor location
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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